An innovation from the University of Surrey that solves a problem that has afflicted source-gated transistors (SGT) may bring flexible, low-power displays one step closer. IEEE Transactions on Electron Devices published the study.
“We used a rapidly emerging semiconductor material called IGZO, or indium-gallium-zinc oxide, to create the next generation of source-gated transistors,” stated Dr. Radu Sporea, project lead from the University of Surrey. We were able to create transistors that are much more temperature-resistant than previous attempts thanks to nanoscale contact engineering. Using device simulations, we were able to comprehend this effect.
“This new design gives SGTs temperature stability while keeping the usual advantages of using little power, producing a lot of signal amplification, and being more reliable under a variety of conditions. We are steadily working to eliminate the drawbacks of source-gated transistors, which are not widely used due to a few performance issues.
A special kind of transistor called a source-gated transistor (SGT) combines a thin-film transistor and a metal-semiconductor contact that has been carefully designed. It uses less power and is more stable than conventional transistors, among other advantages. SGTs have the potential to be utilized in a variety of fields, including engineering, computing, medicine, and large-area electronics.
Credit: University of Surrey
Alfarisyi carried out the simulations as part of his final-year undergraduate project at the University of Surrey. Source-gate transistors, according to Salman, “could be the foundation for new power-efficient flexible electronics technology that helps to meet our energy needs without affecting our planet’s health.” For instance, their capability of sensing and signal amplification makes it simple to recommend them as essential components for medical devices that interface with our entire bodies, enabling us to gain a deeper comprehension of human health.”
More information: Salman Alfarisyi et al, Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors, IEEE Transactions on Electron Devices (2023). DOI: 10.1109/TED.2023.3276337
