An innovation from the University of Surrey that solves a problem that has afflicted source-gated transistors (SGT) may bring flexible, low-power displays one step closer. IEEE Transactions on Electron Devices published the study. "We used a rapidly emerging semiconductor material called IGZO, or indium-gallium-zinc oxide, to create the next generation of source-gated transistors," stated Dr. Radu Sporea, project lead from the University of Surrey. We were able to create transistors that are much more temperature-resistant than previous attempts thanks to nanoscale contact engineering. Using device simulations, we were able to comprehend this effect. "This new design gives SGTs temperature stability