In the field of electronics engineering, one of the main goals is to make transistors and other electronic parts that are smaller and more efficient with materials and processes that are easy to find. Ferroelectric field effect transistors (FE-FETs), which are similar to conventional FETs but also contain ferroelectric materials, are among the transistors that have been found to be particularly promising. FE-FETs contain entryway separators made of ferroelectric materials that can both switch and store electrical charge. These ferroelectric-based transistors could also be used as memory devices in addition to controlling the flow of current in electronic devices like