The University of Tokyo team, under the direction of Professor Naoya Shibata, worked with Sony Group Corporation to successfully observe up close a two-dimensional electron gas that had gathered at the semiconductor interface. Highly effective light-emitting diodes (LEDs) and laser diodes (LDs) are made from GaN-based components. These are anticipated to be used as next-generation high-frequency devices for communication as well as power devices for power conversion due to their high dielectric breakdown strength and saturated electron velocity. A layer of accumulated electrons known as a two-dimensional electron gas is produced at the semiconductor interface, specifically by high-electron-mobility transistors (HEMTs).