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Nanophysics

Researchers discover a method to decrease the overheating of semiconductor devices.

The reliability and durability of modern devices have been negatively impacted by the need to reduce the size of semiconductors and the issue of heat generated at device hot spots not being effectively dispersed. Existing warm administration advances have not been capable. Hence, the disclosure of a better approach for scattering heat by utilizing surface waves produced on the flimsy metal films over the substrate is a significant leap forward.

A new heat transference caused by “surface plasmon polariton” in a thin metal film deposited on a substrate was successfully measured by Professor Bong Jae Lee’s research team in the Department of Mechanical Engineering, according to KAIST.

The term “surface plasmon polariton” (SPP) refers to a wave that forms on a metal’s surface as a result of a strong interaction between the electromagnetic field at the metal-dielectric interface, free electrons on the metal’s surface, and other similarly vibrating particles.

“The importance of this research lies in the discovery of a novel heat transfer mode using surface waves over a thin metal film placed on a substrate with low processing complexity. It can be used as a nanoscale heat spreader to effectively dissipate heat close to hot spots for semiconductor devices that are readily overheatable.”

KAIST Professor Bong Jae Lee, who led the research,

The examination group used SPPs, which are surface waves produced at the metal-dielectric interface, to work on warm diffusion in nanoscale slight metal movies. This new heat transfer mode can be produced over a large area and is highly usable in the device manufacturing process because it occurs when a thin metal film is deposited on a substrate. The researchers demonstrated that surface waves generated over a 3 cm-radius, 100 nm-thick titanium (Ti) film led to a 25% increase in thermal conductivity.

“The significance of this research is that a new heat transfer mode using surface waves over a thin metal film deposited on a substrate with low processing difficulty was identified for the first time in the world,” stated KAIST Professor Bong Jae Lee, who led the research. It can be used as a nanoscale heat spreader to effectively dissipate heat near hot spots in semiconductor devices that are easy to overheat.”

The outcome has extraordinary ramifications for the improvement of elite execution semiconductor gadgets later on in that it very well may be applied to quickly disperse heat on a nanoscale thin film. Specifically, this new intensity move mode distinguished by the exploration group is supposed to take care of the central issue of warm administration in semiconductor gadgets as it empowers considerably more compelling intensity move at nanoscale thickness while the warm conductivity of the slim film normally diminishes because of the limit dispersing impact.

This study was distributed web-based on April 26 in Actual Survey Letters and was chosen as an Editors’ Idea.

More information: Dong-min Kim et al, Boosting Thermal Conductivity by Surface Plasmon Polaritons Propagating along a Thin Ti Film, Physical Review Letters (2023). DOI: 10.1103/PhysRevLett.130.176302

Journal information: Physical Review Letters

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